The TC58CVG0S3HxAIx is a 1Gbit serial interface NAND Flash by TOSHIBA, designed for embedded applications and supporting SPI communication. Its memory array is organized as (2048+64) bytes × 64 pages × 1024 blocks. Each page consists of a 2048-byte main data area and a 64-byte spare area, with each block containing 64 pages, resulting in a total of 1024 blocks for the entire chip.

Internally, the TC58CVG0S3HxAIx is equipped with a 2112-byte data buffer. During a page read operation, the chip first transfers the target page from the NAND memory array to the internal buffer, and the external controller then reads the cached data via the SPI interface. For page programming, the data transfer direction is reversed.

Image source: Official TOSHIBA website

The TC58CVG0S3HxAIx supports a high-speed mode for sequential page reads. During a standard read operation, the chip must transfer the page contents from the memory array to the internal buffer; this phase corresponds to the page read time, tR. When high-speed mode is enabled, the average tR during sequential page reads can be reduced. This feature helps minimize the waiting time between pages when sequentially loading programs, reading large files, or processing data.

In addition, the TC58CVG0S3HxAIx integrates internal ECC logic capable of correcting up to 8-bit read errors per (512+16)-byte data range. Beyond automatic error correction, the internal ECC logic also provides detailed bit-flip count information. If the number of bit flips in a specific page or block continues to increase, it indicates that the data integrity in that area may be degrading. Based on the ECC reports, the system can take appropriate measures, such as:

1. Proactively refresh the data in the relevant pages.
2. Migrate the data to blocks with better health conditions.
3. Update the logical-to-physical address mapping.
4. Add the abnormal blocks to the bad block management list.

The bit-flip count serves as a "health report" for the storage area. It is not only used to determine whether the current data can be corrected, but also provides a basis for subsequent data maintenance and lifespan management.

Key Features:

Organization (Internal ECC Enabled, Default)

Memory Cell Array: 2112 × 64 × 1024 × 8 bits

Data Buffer: 2112 × 8 bits

Page Size: 2112 Bytes

Block Size: (128K + 4K) Bytes

Organization (Internal ECC Disabled)

Memory Cell Array: 2176 × 64 × 1024 × 8 bits

Data Buffer: 2176 × 8 bits

Page Size: 2176 Bytes

Block Size: (128K + 8K) Bytes

ECC: 8-bit ECC per 512 Bytes

On-chip ECC Logic

Supported Commands:

Page Read, Page Program, Block Erase, Internal Data Move, Reset, Write Enable, Write Disable, Block Lock, Get Features, Set Features, Block Protection, Parameter Page Read, ID Read, Unique ID Read

Power Supply:

VCC: 2.7 V to 3.6 V

Access Time:

Cell Array to Data Buffer: 155 µs Max, 70 µs Typ

Data Transfer Rate: 104 MHz Max

Program / Erase Time:

Page Program Time: 360 µs/page Typ

Block Erase Time: 2.0 ms/block Typ

Operating Current:

Read Operation (HSE ON, Avg): 21 mA Max

Read Operation (HSE OFF, Avg): 15 mA Max

Program Operation (Avg): 18 mA Max

Erase Operation (Avg): 22 mA Max

Standby Current: 180 µA Max, 35 µA Typ

Package Options:

SOP16 (P-SOP16-1111-1.27-001)

WSON8 (P-WSON8-0608-1.27-003)

Internal  Block  Diagram

As a manufacturer of universal chip programmers, WuXin Technology focuses on the fields of IC programming and testing. While continuously optimizing and updating its programming software, the company is also actively expanding its compatibility with chip models from major manufacturers. The ET9800 programmer supports 1-to-8 simultaneous programming and offers both online and offline operating modes, fully meeting the mass production requirements for both offline (bare chip) and in-system (ISP) programming of the TOSHIBA TC58CVG0S3HxAIx chip.

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