The C58BYG0S3HBAI6 is a 1Gbit NAND E²PROM with a total capacity of 1,107,296,256 bits, operating on a single 1.8V power supply. Each page consists of a 2048-byte main data area and a 64-byte spare area. Each block comprises 64 pages, and the entire device contains 1024 blocks.

The C58BYG0S3HBAI6 integrates a 2112-byte static register, which serves as a "page buffer" between the external interface and the NAND memory array. Its capacity perfectly matches a full page. During a page read operation, the device first transfers the target page content from the memory array to the static register, and the external controller then reads the data via the I/O interface.

The C58BYG0S3HBAI6 utilizes I/O pin multiplexing for command input, address input, and data I/O. During different operation phases, the same set of I/O pins performs different functions:

Command Phase: Receives read, program, and erase instructions.

Address Phase: Receives column and page addresses.

Data Phase: Transfers page content or status information.

The TC58BYG0S3HBAI6 follows the standard NAND Flash "page-program, block-erase" mechanism. NAND Flash typically cannot overwrite previously programmed data. To modify a specific page, the entire block containing that page must be erased first, followed by rewriting the pages that need to be retained and updated.

The internal controller of the TC58BYG0S3HBAI6 can automatically execute program and erase operations. This makes the device highly suitable for solid-state file storage, voice recording, digital camera image storage, and other systems requiring high-density non-volatile memory.

Key Features:

Organization: x8

Memory Cell Array: 2112 × 64K × 8

Register: 2112 × 8

Page Size: 2112 Bytes

Block Size: (128K + 4K) Bytes (注：原文“128K × 4K”在存储规格中通常为相加关系，即 128KB主区+4KB备区，此处已按行业标准修正为 +)

Supported Commands: Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read

Mode Control: Serial Input/Output Command Control

Valid Block Count:

Minimum: 1004 Blocks

Maximum: 1024 Blocks

Power Supply: VCC = 1.7 V to 1.95 V

Access Time:

Cell Array to Register: 40 µs Typ

Serial Read Cycle: 25 ns Min (CL = 30 pF)

Program / Erase Time:

Auto Page Program: 330 µs/page Typ

Auto Block Erase: 3.5 ms/block Typ

Operating Current:

Read (25 ns Cycle): 30 mA Max

Program (Avg): 30 mA Max

Erase (Avg): 30 mA Max

Standby: 50 µA Max

Package: P-VFBGA67-0608-0.80-001 (Weight: 0.095 g Typ)

On-chip ECC: 8-bit ECC per 528 Bytes

内部框图

internal block diagram

As a manufacturer of universal IC programmers, Wuxin Technology focuses on the fields of IC programming and testing. While continuously optimizing and updating its programming software, the company is also actively expanding its compatibility with chip models from major manufacturers.

The ET9800 programmer supports an 8-channel simultaneous programming configuration and offers both online and offline operating modes. It comprehensively meets the bare-die offline programming requirements for the TOSHIBA TC58BYG0S3HBAI6 chip.

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